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Electronics Engineering Objective Questions { Semiconductor Physics and Diodes }



57. A P-P junction is a transition
A. between two semiconducting materials having different electrical properties
B. between two semiconducting materials having identical electrical properties
C. region between two regions having differential properties in a P-type semiconducting material
D. none of these
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58. In the forward bias condition, the potential of P-side with respect to N-side is
A. positive
B. negative
C. either positive or negative
D. Neutral
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59. In a semiconductor dode, P-side is grounded and N-side applied a potential of-2 V. The diode shall
A. conduct
B. not conduct
C. Conduct partially
D. none of these
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60. P-side of a semiconductor diode is applied a potential of 2.5 V whereas N-side is applied a potential of ?5.0 V. The *diode shall
A. conduct
B. not conduct
C. conduct partially
D. breakdown
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61. In a semiconductor diode, V-1 relationship is such that
A. current varies linearly with voltage
B. current increases exponentially with voltage
C. current varies inversely with voltage
D. none of these
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62. Cut-in voltage of a silicon diode is
A. 0.1 V
B. 0.2 V
C. 0.6 V
D. none of these
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63. Cut-in voltage of a germanium diode is
A. 0.1 V
B. 0.2 V
C. 0.6 V
D. none of these
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