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Electronics Engineering Objective Questions { Semiconductor Physics and Diodes }



190.  In the depletion region of a pn junction, there is a shortage of
A. acceptor ions
B. holes and electrons
C. donor ions
D. none of the above
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191.  A reverse biased pn junction has
A. very narrow depletion layer
B. almost no current
C. very low resistance
D. large current flow
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192. A pn junction acts as a
A. controlled switch
B. bidirectional switch
C. unidirectional switch
D. none of the above
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193. A reverse biased pn junction has resistance of the
A. order of
B. order of Ica
C. order of MU
D. none of the above
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194. The leakage current across a pn junction is due to
A. minority carriers
B. majority carriers
C. junction capacitance
D. none of the above
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195. When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on
A. junction capacitance
B. minority carriers
C. majority carriers
D. none of the above
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196.  With forward bias to a pn junction, the width of depletion layer
A. decreases
B. increases
C. remains the same
D. none of the above
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