155. When forward biased, a diode
A. blocks current
B. conducts current
C. has a high resistance
D. drops a large voltage
156. The term bias means
A. the ratio of majority carriers to minority carriers
B. the amount of current across the P-N junction
C. a dc voltage applied across the P-N junction to control its operation
D. none of the above
157. The forward-bias a P-N junction, diode,
A. an external voltage is applied that is positive at the anode and negative at the cathode
B. an external voltage is applied that is negative at the anode and positive at the cathode.
C.an external voltage is applied that is positive at the P-region and negative at the N-region
D. a and c above
158. When a P-N junction is forward-biased
A. the only current is the hole current
B. the only current is the electron current
C. the only current is produced by majority carriers
D. the current is produced by both holes and electrons
159. A P-N. junction diode's dynamic conductance is directly proportional to
A. the applied voltage
B. the temperature
C. the current
D. the thermal voltate
160. The junction capacitance of a linearly graded junction varies with the applied reverse bias, VR as
A. VR-1
B. VR-1/2
C. VR-1"
D. VR112
161. The diffusion capacitance of a forward biased e N (p+ indicates heavily doped P-region) junction diode with a steady current I depends on
A. width of the depletion region
B. mean life-time of holes
C. mean life-time of electrons
D. junction-area
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