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Electronics Engineering Objective Questions { Semiconductor Physics and Diodes }

127. Barrier potential for silicon diode
A. 0.3 V
B. 0.4 V
C. 0.1 V
D. 0.7 V
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128. A strong electric field across a P-N junction that causes covalent bonds to break apart
A. It is called avalance breakdown
B. It is called reverse breakdown
C. It is called Level breakdown
D. It is called Low voltage breakdown
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129. When a PN-junction is reverse biased
A. holes and electrons move away from the junction
B. holes and electrons move towards the junction
C. movement of holes and electrons seized
D. depletion region decreases
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130. The total energy of a revolving electron in an atom can
A. have any value above zero
B. never be positive
C. never be negative
D. not be calculated
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131. An atom is said to be ionised when any one of its orbiting electron
A. Jumps from one orbit to another
B. is raised to a higher orbit
C. comes to the ground state
D. is completely removed
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132. The maximum nmber of electrons which the M-shell of an atom can contain is
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133. Electronic distribution glf an Si atom is
A. 2, 10, 2
B. 2, 8, 4
C. 2, 7, 5
D. 2, 4, 8
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