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ECE Objective Questions { Semiconductor Physics and Diodes }



71. Performance of one of the following diodes is not based upon its negative resistance characteristic
A. Gunn
B. IMPATT
C. Tunnel
D. Backward

72. One of the following microwave diodes is suitable for very low power oscillator only. It is
A. Tunnel
B. Gunn
C. IMPATT
D. LSA

73. One of the following is not used as a mixer or detector at microwave frequencies
A. Schottky barrier diode
B. Crystal diode
C.(b) Backward?diode
D. PIN diode

74. The transferred?electron bulk effect occurs in
A. germanium
B. silicon
C. gallium arsenide
D. none of these

75. The biggest advantage of TRAPATT diode over IMPATT diode is its
A. higher efficiency
B. higher output
C. lower noise
D. capability to operate at higher frequencies

76. A varactor diode may be advantageous at microwave frequencies (indicate false answer)
A. for electronic tuning
B. as an oscillator
C. as a parametric amplifier
D. for frequency multiplication

77.  If high order frequency multiplication is required from a diode multiplier
A. the resistive cut-off frequency must be high
B. a small value of base resistance is required
C. a step recovery diode must be used
D. none of these

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