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Electronics Engineering Objective Questions { Semiconductor Physics and Diodes }



64. Peak-inverse-voltage of a semiconductor diode is
A. the maximum voltage a diode can withstand in the forward bias condition
B. the maximum voltage a diode can withstand in the reverse bias condition
C. the voltage across the diode in reverse bias condition
D. the voltage across the diode in forward bias condition
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65. The static resistance of a diode is
A. its DC opposition to the current flow
B. its opposition to AC flow
C. resistance of the diode when forward biased
D. none of these
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66. The dynamic resistance of diode is
A. the resistance of diode when forward biased
B. the resistance of diode when reverse biased
C. the AC opposition to the current flow
D. none of these
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67. A semiconductor transistor operates in the active region only when
A. the emitter junction is forward biased and collector junction is reverse biased
B. both emitterand collector junctions are forward biased
C. both emitter and collector junctions are reverse biased
D. the emitter junction is reverse biased and collector junction is forward biased
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68. The capacitance appearing across a reverse biased semiconductor junction
A. increases with increase in the bias voltage
B. decreases with increase in the bias voltage
C. is independent of bias voltage
D. none of these
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69. A zener diode is generally operated
A. in a reverse?biased mode
B. in a forward?biased mode
C. with a very large value of reverse bias
D. none of these
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70. One of the following diodes will produce the highest pulsed power output
A. Varactor
B. Gunn
C. Schottky barrier
D. RIMPATT
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