57. A FET consists of a
A. source
B. drain
C. gate
D. all of the above
58. FETs have similar properties to
A. PNP transistors
B. NPN transistors
C. thermonic valves
D. unijunction transistors
59. For small values of drain-to-source voltage JFET behaves like a
A. resistor
B. constant-current source
C. constant-voltage source
D.(c) negative resistance
60. In a JFET, the primary control on drain current is exerted by
A. channel resistance
B. size of depletion regions
C. voltage drop across channel
D. gate reverse bias
61. After Vps reaches pinch-off value VP in JFET, drain current ID becomes
A. zero
B. low
C. saturated
D. reversed
62. In a JFET, as external bias applied to the gate is increased
A. channel resistance is decreased
B. drain current is increased
C. pinch-off voltage is reached at lower values of ID
D. size of depletion regions is reduced
63. In a JFET, drain current is maximum when VGS is
A. zero
B. negative
C. positive
D. equal to VP
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