57. A FET consists of a
A. source
B. drain
C. gate
D. all of the above

---

58. FETs have similar properties to
A. PNP transistors
B. NPN transistors
C. thermonic valves
D. unijunction transistors

---

59. For small values of drain-to-source voltage JFET behaves like a
A. resistor
B. constant-current source
C. constant-voltage source
D.(c) negative resistance

---

60.  In a JFET, the primary control on drain current is exerted by
A. channel resistance
B. size of depletion regions
C. voltage drop across channel
D. gate reverse bias

---

61. After Vps reaches pinch-off value VP in JFET, drain current ID becomes
A. zero
B. low
C. saturated
D. reversed

---

62. In a JFET, as external bias applied to the gate is increased
A. channel resistance is decreased
B. drain current is increased
C. pinch-off voltage is reached at lower values of ID
D. size of depletion regions is reduced

---

63.  In a JFET, drain current is maximum when VGS is
A. zero
B. negative
C. positive
D. equal to VP

---