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ECE Objective Questions { Diode Circuits }



57. Consider the following statements Vo A regarding the circuit given in the figure, where the output voltage is constant : 1. V the voltage at which the zener breaks down 2. IL < the difference between I and 12, the current at which the zener breaks down. 3. Rs < the zener nominal resistance Of these statements
A. 1,2 and 3 are correct
B. 1 and 2 are correct
C. 2 and 3 are correct
D. 1 and 3 are correct

58. The ideal characteristic of a stabilizer is
A. constant output voltage with low internal resistance
B. constant output with low internal resistance
C. constant output voltage with high internal resistance
D. constant internal resistance with variable output voltage

59. Silicon diode is less suited for low voltage rectifier operation, because
A. it can withstand high temperatures
B. its reverse saturation current is low
C. its cut-in voltage is high
D. its break down voltage is high

60. As compared to a full-wave rectifier using two diodes, the four diode bridge rectifier has the dominant advantage of
A. higher current carrying capacity
B. lower peak inverse voltage requirement
C. lower ripple factor
D. higher efficiency

61. The voltage and V1 and V2 of the arrangement shown in the figure will be respectively +3V Fig. 2.8
A. 6 V and 5.4 V
B. 5.4 V and 6 V
C. 3 V and 5.4 V
D.6 V and 3 V

62. A pure semiconductor behaves like an insulator at 0?K because
A. there is no recombination of electrons with holes
B. drift velocity of free electrons is very small
C. free electrons are not available for current conduction
D. energy possessed by electrons at that low temperature is almost zero

63.  ____ is used to describe the static WI characteristic of a junction diode
A. Bolan= diode equation
B. Richardson-Dushman equation
C. Child's Three half-power law
D. Einstein's photoelectric equation

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