Electronics Engineering Objective Questions { Bipolar Junction Transistor }

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162. Conventional biasing of a bipolar transistor has

A. EB forward biased and CB forward biased

B. EB reversed biased and CB forwaqrd biased

C. EB forward biased and CB reverse biased

D. EB reversed biased and CB reverse biased

163. Which of the following number specification refers to FET with one gate

164. A diac is a semi-conductor device which acts as a

A. 2 terminal unidirectional switch

B. 2 terminal bidirectional switch

C. 3 terminal bidirectional switch

D. 4 terminal multi-directional switch

165. Which of the following is necessary for transistor action?

A. The base region must be very wide

B. The base region must be very narrow

C. The base region must be made of some insulating material

D. The collector region must be heavily doped

166. In a transistor, current 1030 flows when

A. some dc voltage is applied in the reverse direction to the emitter junction with the collector open circuited

B. some dc voltage is applied in the forward direction to the collector junction with the emitter open circuited

C. some dc voltage is applied in the reverse direction to the collector junction with the emitter open circuited

D. some dc voltage is applied in the forward direction to the emitter junction with the collector open-circuited.

167. The current Icao

A. increases with increase in temperature

B. is normally greater for silicon transistors than germanium transistors

C. mainly depends on the emitter base junction bias

D. depends largely on the emitter doping

168. Thermal run away of a transistor occurs when

A. heat dissipation from transistor is excessive

B. transistor joints melt due to high temperature

C. there is excessive leakage current due temperature rise

D. none of the above

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