316. A property of semiconductors that is important for high-temperature application is
A. high carrier mobilities high conductivity
B.(e) wide energy gap
C.(f) high diffusion rate
D.

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317. Most outstanding property of indium antimonide is
A. a very wide energy gap
B. high resistivity at room temperature
C. high carrier mobilities
D. very low conductivity at room temperature

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318. A compound that has properties which indicate good all-round use is
A. Indium antimonide
B. Silicon carbide
C. Gallium arsenide
D. Zinc sulfide

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319. A property of semiconductors that is important in high-frequency application is
A. high carrier mobilities
B. wide energy gap
C. high resistivity at room temperature
D. narrow energy gap

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320. Lead telluride
A. is a III-V compound
B. has the zinc blende structure
C. is a IV-VI compound
D. is a II-VI compound

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321. A exmaple of a II-VI compound is
A. Silicon carbide
B. Gallium arsenide
C. Zinc sulfide
D. Lead telluride

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322. A desired energy-gap material can be obtained by forming a solid solution using two compounds with
A. equal energy gaps
B. energy gaps below the desired energy gap
C. energy gaps above the desired energy gap
D. energy gaps above and below the desired energy gap

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