246.  For transistor action
A. collector must be more heavily doped than the base region
B. base region must be n-type material
C. base region must be narrow compared to its minority-carrier diffusion length
D. collector junction must be forwardbiased

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247. 1"0 is the current that flows when a specified dc voltage is applied
A. in the forward direction to the emitter junction with the collector open circuited
B. in the reverse direction to the emitter junction with the collector opencircuited
C. in the forward direction to the collector junction with the emitter open-circuited
D. in the reverse direction to the collector junction with the emitter open-circuited

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248. lam
A. is generally greater in silicon than in germanium transistors
B. depends largely on the emitter doping
C. depends largely on the emitter-junction bias
D. increases with an increase in temperature

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249. In junction transistor, the excess minority carriers move across the base region by
A. diffusion
B. the push of the emitter-junction bias
C. the push of the collector-junction bias voltage
D. drift

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250. The main current crossing the collector junction in a normally biased n-p-n transistor is
A. a diffusion current
B. a drift current
C. a hole current
D. equal to the base current

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251. In the p-n-p transistor, electrons flow
A. into the transistor at the emitter and base leads
B. out of the transistor at the emitter and base leads
C. into the transistors at the collector and base leads
D. out of the transistor at the collector and base leads

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252. 1030 flows in the
A. emitter, base, and collector leads
B. emitter, and base leads
C. emitter and collector leads
D. base and collector leads

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