141.  If RH is the Hall coefficient of a material carrying current I and subject to a transverse magnetic field B across width w of the specimen, the Hall voltage VH equals
A.B1R
B.H BLw
C.R
D. BIwRj

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142. When a material carrying current I is subject to a transverse magnetic field B across width w of the speciman, the Hall coefficient is given by where VH is the Hall voltage.
A.VH
B.wB
C. wl
D.wB

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143.  In an intrinsic semiconductor, Fermi level represents the energy level with probability of its occupation of
A.0%
B.25%
C.50%
D.100%

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144.  At 0?K, the percentage of quantum states occupied upto fermi levels is
A.0%
B.25%
C.50%
D.100%

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145.  In a given semiconductor, fermi level EF is proportional to where n indicates the total number of free electrons per unit volume
A. n
B. n2
C. n213
D. n312

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146.  In an intrinsic semiconductor, the concentration of free electrons in the conduction band is given by e-(EC-EF)/KT
A. Nc
B. NcE4EF-EC)/kT
C. Nce-(EC-EF)/kT
D. Nce-(EF-EC)/kT

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147.  In an intrinsic semiconductor, the concentration of holes in the valence band is givenby
A. Nve-{EV-EFAT
B.Nve4EF-EVAT EF)/
C. NvE4V-EkT
D. Nve-(EF-EVykT

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