99. Movement of charge carriers from an area of high carrier concentration to an area of low carrier concentration is called
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100. Change of carrier concentration along the length of a semiconductor is called
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101. When a free electron is recaptured by a hole, the process is called
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102. In a semiconductor, movement of charge carriers under influence of an electric field is called
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103. Imperfections in the crystal structure result in
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104. In pure silicon, major part of the drift current is due to free electrons because
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105. At room temperature intrinsic carrier concentration is higher in germanium than in silicon because
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